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IXGR6N170A - High Voltage IGBT

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation Advantages z High Power Density z Low Gate Drive Requirement.

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Advance Technical Information High Voltage IGBT (Electrically Isolated Tab) IXGR6N170A VCES = 1700V IC25 = 5.5A VCE(sat) ≤ 7.0V tfi(typ) = 32ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient Maximum Ratings 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 5.5 A 2.5 A 18 A VGE = 15V, TVJ = 125°C, RG = 33Ω Clamped Inductive Load ICM = 12 A @ 0.8 • VCES TJ = 125°C, VCE = 1200 V, VGE = 15 V, RG = 33Ω 10 μs TC = 25°C 50 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 20 seconds Mounting Force 2500 V~ 3000 V~ 20..120/4.5..
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