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IXGR72N60B3H1 - Medium Speed Low Vsat PT IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface Optimized for Low Conduction and Switching Losses.
  • 2500V~ Electrical Isolation.
  • Square RBSOA.
  • Anti-Parallel Ultra Fast Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C Characteristic Values Min. Typ. Max. 3.0 5.0 V 300 A 5 mA.

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GenX3TM 600V IGBT w/ Diode IXGR72N60B3H1 (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching VCES IC110 VCE(sat) tfi(typ) = 600V = 40A £ 1.80V = 92ns ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C 50/60 Hz, 1 Minute Maximum Ratings 600 V 600 V 20 V 30 V 80 A 40 A 34 A 450 A ICM = 240 A VCE  VCES 200 W -55 ... +150 C 150 C -55 ... +150 C 2500 V~ Mounting Force 20..120/4.5..27 N/lb Maximum Lead Temperature for Soldering 300 °C 1.6mm (0.062 in.
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