• Part: IXGR72N60B3H1
  • Manufacturer: IXYS
  • Size: 255.90 KB
Download IXGR72N60B3H1 Datasheet PDF
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IXGR72N60B3H1 Description

GenX3TM 600V IGBT w/ Diode IXGR72N60B3H1 (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching VCES IC110 VCE(sat) tfi(typ) = 600V = 40A £ 1.80V = 92ns ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ.

IXGR72N60B3H1 Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Isolated Mounting Surface Optimized for Low Conduction and Switching Losses
  • 2500V~ Electrical Isolation
  • Square RBSOA
  • Anti-Parallel Ultra Fast Diode
  • High Power Density
  • Low Gate Drive Requirement