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IXGR72N60B3H1 - Medium Speed Low Vsat PT IGBT

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IXYS

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IXGR72N60B3H1 Medium Speed Low Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXGR72N60B3H1

Datasheet Details

Part number	IXGR72N60B3H1
Manufacturer	IXYS
File Size	255.90 KB
Description	Medium Speed Low Vsat PT IGBT
Datasheet	IXGR72N60B3H1 Datasheet
Additional preview pages of the IXGR72N60B3H1 datasheet.

Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface Optimized for Low Conduction and Switching Losses.
2500V~ Electrical Isolation.
Square RBSOA.
Anti-Parallel Ultra Fast Diode Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C Characteristic Values Min. Typ. Max. 3.0 5.0 V 300 A 5 mA.

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Published: Sep 28, 2013 |