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IXGT20N140C3H1 - GenX3 1400V IGBTs

Key Features

  • z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C, Note 1 VCE = 0V, VGE = ±20V IC = IC100, VGE = 15V, Note 1 TJ = 125°C VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 3.0 5.0 100 2.0 ±100 4.0 3.5 5.0 V μA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information GenX3TM 1400V IGBTs w/ Diode High-Speed PT IGBTs for 20 - 50 kHz Switching IXGH20N140C3H1 IXGT20N140C3H1 VCES = IC100 = VCE(sat) ≤ tfi(typ) = TO-247 (IXGH) 1400V 20A 5.0V 32ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1400 1400 ±20 ±30 42 20 108 20 400 ICM = 40 VCE ≤ VCES 250 www.DataSheet.co.kr V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. g g G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector -55 ... +150 150 -55 ... +150 1.