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IXGT25N250 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60 A V CE(sat) ≤ 2.9 V TO-247 (IXGH) Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L TSOLD Md Weight Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE= 20 V, TJ = 125°C, RG = 20 Ω Clamped inductive load @ 1250V TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Maximum Ratings 2500 V 2500 V G CE C (TAB) ± 20 V TO-268 (IXGT) ± 30 V 60 A 25 A 200 A G E C (TAB) ICM = 240 A PLUS220SMD (IXGV...S) 250 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C G = Gate, E = Emitter, °C G E C (TAB) C = Collector, TAB = Collector Mounting torque (TO-247) 1.

Download the IXGT25N250 datasheet PDF. This datasheet also includes the IXGH25N250 variant, as both parts are published together in a single manufacturer document.

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Key Features

  • Test Conditions IC = 250 μA, VGE = 0 V IC = 250 μA, VCE = VGE V = 0.8.
  • V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 25 A, VGE = 15 V IC = 75 A TO-247 TO-268 6 g 4 g Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 2500 V 3.0 5.0 V TJ = 125°C 50 μA 1 mA ±100 nA 2.9 V 5.2 V High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification.

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