IXGT2N250 - High Voltage IGBT

This page provides the datasheet information for the IXGT2N250, a member of the IXGH2N250 High Voltage IGBT family.

Product Overview

IXYS

Part number	IXGT2N250
Manufacturer	IXYS
File Size	184.81 KB
Description	High Voltage IGBT
Datasheet	IXGT2N250 Datasheet
Additional preview pages of the IXGT2N250 datasheet.

z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC110, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 2500 V 3.0 5.5 V TJ = 125°C 10 μA 100 μA ±100 nA TJ = 125°C 2.6 3.1 V 3.1 V Advantages z High Power Density z Low Gate Drive Re.

Other Datasheets by IXYS

Published: Feb 9, 2025 |