IXGT2N250 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 4 g G CE C (TAB) TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
IXGT2N250 Key Features
- VCES, VGE = 0V
IXGT2N250 is High Voltage IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGT20N100 | IGBT |
| IXGT20N120B | High Voltage IGBT |
| IXGT20N140C3H1 | GenX3 1400V IGBTs |
| IXGT24N170A | High Voltage IGBT |
| IXGT24N170AH1 | High Voltage IGBT |
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 4 g G CE C (TAB) TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector.