IXGT30N60C2D1
Overview
- 13/10Nm/. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA nA V V
