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IXGT30N60C2D1 - HiPerFAST IGBT

Download the IXGT30N60C2D1 datasheet PDF. This datasheet also covers the IXGH30N60C2D1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z 1.13/10Nm/lb. in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA nA V V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60C2D1_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT30N60B HiPerFASTTM IGBT IXYS Corporation
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGT30N60C2 HiPerFAST IGBT
IXGT30N60B2D1 IGBT
IXGT32N120A3 Ultra-Low Vsat PT IGBT
IXGT32N170 High Voltage IGBT
IXGT32N170A High Voltage IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFAST with Diode TM IGBT C2-Class High Speed IGBTs IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ = 600 V = 70 A = 2.7 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A W °C °C °C °C °C g g TO-247 AD (IXGH) C (TAB) G C E TO-268 (IXGT) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.