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IXGT32N120A3 - Ultra-Low Vsat PT IGBT

Download the IXGT32N120A3 datasheet PDF. This datasheet also covers the IXGH32N120A3 variant, as both devices belong to the same ultra-low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Optimized for Low Conduction Losses z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N120A3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGT32N170 High Voltage IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1200 V 1200 V ±20 V ±30 V 75 A 32 A 230 A 20 A 120 mJ ICM = 150 A VCE ≤ 0.8 • VCES 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 4.