IXGT32N120A3 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 50 μA 1 mA ±100 nA 2.35 V 11 V TO-268 (IXGT) G E C (Tab) TO-247 (IXGH) G CE C (Tab) G = Gate C = Collector E = Emitter Tab = Collector.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IXGT32N120A3 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 203.32 KB |
| Description | Ultra-Low Vsat PT IGBT |
| Datasheet | IXGT32N120A3 IXGH32N120A3 Datasheet (PDF) |
|
|
|
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 50 μA 1 mA ±100 nA 2.35 V 11 V TO-268 (IXGT) G E C (Tab) TO-247 (IXGH) G CE C (Tab) G = Gate C = Collector E = Emitter Tab = Collector.
| Part Number | Description |
|---|---|
| IXGT32N170 | High Voltage IGBT |
| IXGT32N170A | High Voltage IGBT |
| IXGT32N90B2 | High Speed IGBTs |
| IXGT32N90B2D1 | IGBT |
| IXGT30N60B2D1 | IGBT |
| IXGT30N60C2 | HiPerFAST IGBT |
| IXGT30N60C2D1 | HiPerFAST IGBT |
| IXGT35N120B | IGBT |
| IXGT10N170 | High Voltage IGBT |
| IXGT10N170A | High Voltage IGBT |