IXGT32N120A3 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 50 μA 1 mA ±100 nA 2.35 V 11 V TO-268 (IXGT) G E C (Tab) TO-247 (IXGH) G CE C (Tab) G = Gate C = Collector E = Emitter Tab = Collector.
- Part: IXGT32N120A3
- Manufacturer: IXYS
- Size: 203.32 KB
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