IXGT60N60C3D1 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.
IXGT60N60C3D1 is High Speed PT IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGT64N60B3 | Medium speed low Vsat PT IGBT |
| IXGT6N170 | High Voltage IGBT |
| IXGT6N170AHV | High Voltage IGBT |
| IXGT10N170 | High Voltage IGBT |
| IXGT10N170A | High Voltage IGBT |
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.