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IXGT60N60C3D1 Datasheet High Speed Pt IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ CE(sat) tfi (typ) = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C, (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 26 A 300 A 40 A 400 mJ ICM = 125 A ≤ VCE VCES 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250µA, VCE = VGE ICES VCE = VCES, VGE= 0V IGES VCE(sat) VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V TJ = 125°C TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • z Optimized for Low Switching Losses z Square RBSOA z High Avalanche Capability z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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