IXGX55N120A3H1 Datasheet 1200V IGBT

Manufacturer: IXYS (now Littelfuse)

Download the IXGX55N120A3H1 datasheet PDF. This datasheet also includes the IXGK55N120A3H1 variant, as both parts are published together in a single manufacturer document.

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IXGX55N120A3H1 1200v igbt by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXGK55N120A3H1-IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXGX55N120A3H1
Manufacturer	IXYS (now Littelfuse)
File Size	131.31 KB
Description	1200V IGBT
Download	IXGX55N120A3H1 Download (PDF)

Overview

GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC110 = VCE(sat) ≤ 1200V 55A 2.3V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 125 A 55 A 120 A 400 A ICM = 110 A @ 0.8 • VCES 460 W -55 ...

+150 °C 150 °C -55 ...

+150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C Mounting Torque ( IXGK ) Mounting Force ( IXGX ) 1.13/10 20..120/4.5..27 Nm/lb.in.

Key Features

z Optimized for Low Conduction Losses z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement.

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