Overview: GenX3TM 600V IGBT with Diode
Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64A ≤£ 1.8V = 88ns Symbol
VCES VCGR VGES VGEM
IC110 ICM SSOA
(RBSOA)
PC
TJ TJM Tstg Md FC
TL TSOLD
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C
Mounting torque (TO-264) Mounting force (PLUS247) Maximum Ratings 600 V 600 V ±20 V ±30 V 64 A 400 A ICM = 200 A 460
-55 ... +150 150
-55 ... +150 1.13 / 10
20..120 / 4.5..27 W
°C °C °C Nm/lb.in. N/lb. Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s 300 °C 260 °C TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3.0 5.0 V 700 μA 2.5 mA ±100 nA 1.59 1.
