IXHH40N150HV Description
Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C.
IXHH40N150HV Key Features
- Very High Voltage Package
- Very High Current Capability
- High Power Density
- Low Gate Drive Requirement