IXHX40N150V1HV Description
Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient Maximum Ratings 1500 V ±30.
IXHX40N150V1HV Key Features
- Very High Voltage Package
- Anti-Parallel Diode
- Very High Current Capability
- High Power Density
- Low Gate Drive Requirement