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IXHX40N150V1HV - 1500V MOS Gated Thyristor

Features

  • Very High Voltage Package.
  • Anti-Parallel Diode.
  • Very High Current Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500V, VGK = 0V IL IH IGKS VAK = 0V, VGK = 30V TJ = 125C Characteristic Values Min. Typ. Max. 1500 V 2.5 5.0 V 5.95 7.5 V 1.20 m 6.45 V 15 A 1.5 mA 250 A 200 A 200 n.

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Full PDF Text Transcription

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Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient Maximum Ratings 1500 V ±30 V ±40 V TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C 7.6 kA 3.5 kA 695 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 /4.5..
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