IXHX40N150V1HV Datasheet 1500V MOS Gated Thyristor

Manufacturer: IXYS (now Littelfuse)

IXHX40N150V1HV 1500v mos gated thyristor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXHX40N150V1HV
Manufacturer	IXYS (now Littelfuse)
File Size	186.68 KB
Description	1500V MOS Gated Thyristor
Download	IXHX40N150V1HV Download (PDF)

Overview

Preliminary Technical Information 1500V MOS Gated IXHX40N150V1HV VDM Thyristor A w/ Anti-Parallel Diode = 1500V G K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient Maximum Ratings 1500 V ±30 V ±40 V TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C 7.6 kA 3.5 kA 695 W -55 ...

+150 °C 150 °C -55 ...

+150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 /4.5..

Key Features

Very High Voltage Package.
Anti-Parallel Diode.
Very High Current Capability Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VBR IA = 250A, VGK = 0V VGK(th) IA = 250μA, VAK = VGK VT IT = 1000A, VGK = 15V rT IT > IL, VGK = 15V VBO VGK = 15V ID VAK = 1500V, VGK = 0V IL IH IGKS VAK = 0V, VGK = 30V TJ = 125C Characteristic Values Min. Typ. Max. 1500 V 2.5 5.0 V 5.95 7.5 V 1.20 m 6.45 V 15 A 1.5 mA 250 A 200 A 200 n.

More Datasheets from IXYS (now Littelfuse)

Part Number	Description
IXHH40N150HV	1500V MOS Gated Thyristor