IXKC19N60C5 Description
VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10.
IXKC19N60C5 Key Features
- Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
- Fast CoolMOS™ 1) power MOSFET 4th generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
- low thermal resistance due to reduced chip thickness