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IXKC 23N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
Preliminary data
D
G S
ID25
= 23 A
VDSS
= 600 V
R = DS(on) max 0.1 Ω
ISOPLUS220TM
G D S
E72873
isolated back
surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
23 A 16 A
800 mJ 1.2 mJ
50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.
IXKC23N60C5 Datasheet
