IXKC23N60C5
IXKC23N60C5 is Power MOSFET manufactured by IXYS.
Features
- Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 p F)
- Fast Cool MOS™ 1) power MOSFET 4th generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
- Enhanced total power density
Applications
- Switched mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Power factor correction (PFC)
- Welding
- Inductive heating
- PDP and LCD adapter
Advantages
- Easy assembly: no screws or isolation foils required
- Space savings
- High power density
- High reliability
1) Cool MOS™ is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved
20100303c
1-4
Source-Drain Diode Symbol Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V
IF = 16 A; VGS = 0 V trr
IF = 16 A; -di F /dt = 100 A/µs; VR = 400 V
0.9...
