IXKH20N60C5
IXKH20N60C5 is Power MOSFET manufactured by IXYS.
IXKH 20N60C5 IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω
TO-247 AD (IXKH)
G D S S q D(TAB)
TO-220 AB (IXKP)
MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 20 13 435 0.66 50 V V A A mJ mJ V/ns
Features
- fast CoolMOS™ 1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density...
