IXKH30N60C5 Description
TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 30 21 708 1.2 50 V V A A mJ mJ V/ns.
IXKH30N60C5 Key Features
- fast CoolMOS™ 1) power MOSFET 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density