IXKH30N60C5 - Power MOSFET

Features

fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness.
Enhanced total power density.

IXKH30N60C5 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXKH30N60C5

Datasheet Details

Part number	IXKH30N60C5
Manufacturer	IXYS (now Littelfuse)
File Size	126.96 KB
Description	Power MOSFET
Datasheet	IXKH30N60C5 Datasheet
Additional preview pages of the IXKH30N60C5 datasheet.

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Full PDF Text Transcription

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IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on) max = 0.125 Ω TO-247 AD G G D S S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 30 21 708 1.

Published: Sep 28, 2013 |