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IXKH35N60C5 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G S ID25 = 35 A VDSS = 600 V R = DS(on) max 0.1 Ω TO-247 AD G D S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 35 A 25 A 800 mJ 1.2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.2 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 18 A VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 Ω 90 2.5 3 50 2800 130 60 14 20 10 5 60 5 100 mΩ 3.5 V 5 µA µA 100 nA pF pF 80 nC nC nC ns ns ns ns 0.

Key Features

  • fast.

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