IXKH47N60C Description
TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Conditions TVJ = 25°C Maximum Ratings 600 ± 20 47 30 1800 tbd tbd V V A A mJ mJ V/ns.
IXKH47N60C Key Features
- 3rd generation Superjunction power MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
- low thermal resistance due to reduced chip thickness