IXKH47N60C
IXKH47N60C is Power MOSFET manufactured by IXYS.
IXKH 47N60C
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS Superjunction MOSFET
VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ
TO-247
G D S S q tab
E72873
MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Conditions TVJ = 25°C Maximum Ratings 600 ± 20 47 30 1800 tbd tbd V V A A mJ mJ V/ns
Features
- 3rd generation Superjunction power MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
- low thermal resistance due to reduced chip thickness Applications
- Switched mode power...
