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IXKH47N60C - Power MOSFET

Features

  • 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.

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IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ TO-247 G G D S S q tab E72873 MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...
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