• Part: IXLF19N250A
  • Manufacturer: IXYS
  • Size: 57.60 KB
Download IXLF19N250A Datasheet PDF
IXLF19N250A page 2
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IXLF19N250A page 3
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IXLF19N250A Description

TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 2500 V ± 20 V 32 A 19 A 70 1200 A V 250 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C IC = 1 mA;.

IXLF19N250A Key Features

  • High Voltage IGBT
  • substitute for high voltage MOSFETs with significantly lower voltage drop and parable switching speed
  • substitute for high voltage thyristors with voltage control of turn on & turn off
  • substitute for electromechanical trigger and discharge relays
  • ISOPLUS i4-PACTM high voltage package
  • isolated back surface
  • enlarged creepage towards heatsink
  • enlarged creepage between high voltage pins
  • application friendly pinout
  • high reliability