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IXLF19N250A - High Voltage IGBT

Features

  • High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays.

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    High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres QGon RthJC 1 1 2 5 2 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 2500 V ± 20 V 32 A 19 A 70 1200 A V 250 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 19 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 1500 V; IC = 19 A VGE = ±15 V; RG = 47 Ω 3.2 3.9 V 4.
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