IXSH24N60 Description
+150 1.13 / 10 300 260 6 W °C °C °C Nm/lb.in. °C °C g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min.
IXSH24N60 Key Features
- for low on-state conduction losses z MOS Gate turn-on
- drive simplicity