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IXTA08N100D2HV - High Voltage Depletion Mode Power MOSFET

Key Features

  • High Voltage Package.
  • Normally ON Mode.
  •  International Standard Package.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Depletion Mode Power MOSFET IXTA08N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 N-Channel G S Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 1000 V 1000 V 20 V 30 V TC = 25C 60 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 10..65 / 22..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 25A 1000 V VGS(off) VDS = 25V, ID = 25A - 2.0 - 4.