IXYS IXTA08N50D2
N-Channel MOSFET
MAXIMUM RATINGS
500 V 20 V 30 V 60 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 400mA, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min. Typ. Max. 500 V - 2.5 - 4.5 V 50 nA 1 A 10 A 4.6 800 mA G S D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = DrainFEATURES
● Normally ON Mode● International Standard Packages
● Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
● Easy to Mount
● Space Savings
● High Power Density
APPLICATIONS
● Audio Amplifiers● Start-up Circuits
● Protection Circuits
● Ramp Generators
● Current Regulators
● Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100178E(9/17) Symbol...