Overview: Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) VDSS = ID25 =
RDS(on) ≤ 150V 102A 18mΩ TO-3P (IXTQ) G S (TAB) GD S (TAB) G DS (TAB) G D S (TAB) Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ
Continuous Transient Maximum Ratings 150 V 150 V ± 20 V ± 30 V TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C 102 A 75 A 300 A 51 A 750 mJ IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C 10
455
-55 ... +175 175
-55 ... +175 V/ns
W
°C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10 Mounting Force (TO-263) 10..65/2.2..14.6 Nmlb.in. N/lb. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 5.
