IXYS IXTA110N055T
Power MOSFET
MAXIMUM RATINGS
55 V 55 V ± 20 110 75 300 25 750 V A A A A mJ 3 V/ns 230 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 2 µA 250 µA 5.8 7.0 m Ω TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = DrainFEATURES
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power densityAPPLICATIONS
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current SwitchingAPPLICATIONS
© 2006 IXYS CORPORATION All rights reserved DS99625 (11/06) IXTA110N055T IXTP110N055T Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS...