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IXTA110N12T2 - Power MOSFET

Key Features

  • International Standard Packages.
  • 175°C Operating Temperature.
  • Avalanche Rated.
  • Low RDS(on).
  • Fast Intrinsic Rectifier.
  • High Current Handling Capability Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 120 V 120 V 20 V 30 V 110 A 200 A 55 A 800 mJ 517 W -55 ... +175 175 -55 ... +175  C  C  C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.