Datasheet4U Logo Datasheet4U.com

IXTA12N70X2 - Power MOSFET

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 700 V 2.5 4.5 V 100 nA 5 A 75 A 300 m Advantages.
  • High Power.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA12N70X2 N-Channel MOSFET INCHANGE
IXTA12N50P N-Channel MOSFET INCHANGE
IXTA12N65X2 N-Channel MOSFET INCHANGE
IXTA120N04T2 N-Channel MOSFET INCHANGE
IXTA120N075T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA12N50P Power MOSFET
IXTA12N65X2 Power MOSFET
IXTA120N04T2 Power MOSFET
IXTA120N075T2 Power MOSFET
IXTA100N04T2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 VDSS = ID25 =  RDS(on) 700V 12A 300m TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 12 24 6 300 50 180 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.