Overview: Preliminary Technical Information TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA130N065T2 IXTP130N065T2 VDSS = ID25 =
RDS(on) ≤ 65V 130A 6.6mΩ Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 65 V 65 V ± 20 V 130 A 75 A 330 A 65 A 600 mJ 250 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 260
1.13 / 10 °C °C
Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. Typ. Max. 65 V 2.0 4.0 V ±200 nA 5 μA 150 μA 6.
