IXTA170N075T2
IXTA170N075T2 is Power MOSFET manufactured by IXYS.
Trench T2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA170N075T2 IXTP170N075T2
VDSS = ID25 =
RDS(on) ≤
75V 170A 5.4mΩ
TO-263
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
TJ TJM Tstg
TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings 75 75
± 20 V
170 A 120 A 510 A
85 A 600 m J
360 W
-55 ... +175 175
-55 ... +175
300...
