IXTA1N100P Datasheet (Power MOSFET)

Part: IXTA1N100P
Manufacturer: IXYS (official site)
Size: 296.83 KB

Equivalent or Similar Parts

Manufacturer	Part Number	Description
Inchange Semiconductor	IXTA1N100P	TO-263 N-Channel MOSFET
IXYS	IXTA1N100	High Voltage MOSFET
Inchange Semiconductor	IXTA1N100	N-Channel MOSFET

All IXTA1N100P datasheets

IXTA1N100P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.

IXTA1N100P Key Features

International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
High Power Density
Easy to Mount
Space Savings