IXTA1R4N120P Overview
PolarTM Power MOSFET VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt ID25 = RDS(on) 1200V 1.4A 13 TO-252 (IXTY..HV) G S D (Tab) TO-252 (IXTY) TO-220 (IXTP) D (Tab) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages 1.4 A 4.2 A 1.5 V 900 ns Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
IXTA1R4N120P Key Features
- International Standard Packages
- Low QG
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings