• Part: IXTA1R4N120P
  • Manufacturer: IXYS
  • Size: 368.80 KB
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IXTA1R4N120P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C,.

IXTA1R4N120P Key Features

  • International Standard Packages
  • Low QG
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier
  • High Power Density
  • Easy to Mount
  • Space Savings