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IXTA1R6N100D2HV - High Voltage Depletion Mode Power MOSFET

Key Features

  •  High Voltage package.
  • High Blocking Voltage.
  • Normally ON Mode.
  •  International Standard Package.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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IXTA1R6N100D2 N-Channel MOSFET IXYS Corporation
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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Depletion Mode Power MOSFET IXTA1R6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 100 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 100A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ.