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IXTA200N055T2-7 - Power MOSFET

Datasheet Summary

Features

  • z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density.

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Datasheet Details

Part number IXTA200N055T2-7
Manufacturer IXYS
File Size 135.09 KB
Description Power MOSFET
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TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 55 55 V V ± 20 V 200 A 160 A 500 A 100 A 600 mJ 360 W -55 ...
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