Overview: TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A
65mΩ TO-263 AA (IXTA) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum Ratings - 85 - 85 V V ±15 V ±25 V - 24 A - 80 A - 24 A 200 mJ 83 W -55 ... +150 150
-55 ... +150 °C °C °C 300 260
1.13/10 °C °C Nm/lb.in. 3.0 g 2.5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. - 85 V - 2.5 - 4.