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IXTA300N04T2 - Power MOSFET

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier 175°C Operating Temperature.
  • High Current Handling Capability.
  • ROHS Compliant.
  • High Performance Trench Technology for extremely low RDS(on) Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA300N04T2 IXTP300N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 300 120 900 100 600 480 -55 ... +175 175 -55 ... +175 A A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.