IXTA34N65X2 - Power MOSFET

This page provides the datasheet information for the IXTA34N65X2, a member of the IXTA34N65X2-1 Power MOSFET family.

Datasheet Summary

Features

International Standard Package.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

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Datasheet Details

Part number	IXTA34N65X2
Manufacturer	IXYS
File Size	208.79 KB
Description	Power MOSFET
Datasheet	IXTA34N65X2 Datasheet
Additional preview pages of the IXTA34N65X2 datasheet.

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Full PDF Text Transcription

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X2-Class Power MOSFET IXTA34N65X2 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 V 650 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 34 68 17 1 15 540 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.

Published: Nov 19, 2020 |