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IXTA34N65X2 - Power MOSFET

Download the IXTA34N65X2 datasheet PDF. This datasheet also covers the IXTA34N65X2-1 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA34N65X2-1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X2-Class Power MOSFET IXTA34N65X2 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 V 650 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 34 68 17 1 15 540 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.