IXTA4N60P Datasheet | IXYS

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 30 40 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C OBSOLE4 TE A TC = 25C IS  IDM, VDD  VDSS, TJ  150°C IXTY4N1150060P mJ V/ns TC = 25C IXTA4N9060P W IXTP4N60P -55 ... +150 C C -55 ... +150 C Maximum Lead Temperature for Soldering °C 1.6 mm (0.062in.) from Case for 10s °C Mounting Force (TO-263 & TO-251)...