IXTA4N60P Description
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M.
IXTA4N60P Key Features
- International Standard Packages
- Low QG
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings