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IXTA56N15T - Power MOSFETs

Key Features

  • z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 56 140 5 500 3 300 -55 ... +175 175 -55 ... +175 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g Features z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.