IXTA6N100D2HV - Power MOSFET

Datasheet Summary

Features

 High Voltage package.
High Blocking Voltage.
Normally ON Mode.
 High Voltage package Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXTA6N100D2HV
Manufacturer	IXYS
File Size	224.94 KB
Description	Power MOSFET
Datasheet	IXTA6N100D2HV Datasheet
Additional preview pages of the IXTA6N100D2HV datasheet.

📁 Similar Datasheet

IXTA6N50D2 - N-Channel MOSFET (IXYS Corporation)
IXTA6N50P - N-Channel MOSFET (INCHANGE)
IXTA60N10T - N-Channel MOSFET (INCHANGE)
IXTA60N20T - N-Channel MOSFET (INCHANGE)
IXTA62N15P - PolarHT Power MOSFET (IXYS Corporation)
IXTA62N15P - N-Channel MOSFET (INCHANGE)
IXTA64N10L2 - N-Channel MOSFET (INCHANGE)
IXTA05N100 - Power MOSFET (IXYS Corporation)
IXTA05N100 - N-Channel MOSFET (INCHANGE)
IXTA08N100P - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXTA6N100D2 - N-Channel MOSFET
IXTA6N50P - Power MOSFET
IXTA60N10T - Power MOSFET
IXTA60N20T - Power MOSFET
IXTA64N10L2 - Power MOSFET
IXTA02N250 - High Voltage Power MOSFET
IXTA02N250HV - High Voltage Power MOSFET
IXTA02N450HV - High Voltage Power MOSFETs

Full PDF Text Transcription

Click to expand full text

High Voltage Depletion Mode Power MOSFET IXTA6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 300 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb. 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ. Max.

Published: Mar 22, 2025 |