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IXTA6N100D2HV - Power MOSFET

Key Features

  •  High Voltage package.
  • High Blocking Voltage.
  • Normally ON Mode.
  •  High Voltage package Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription for IXTA6N100D2HV (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA6N100D2HV. For precise diagrams, and layout, please refer to the original PDF.

High Voltage Depletion Mode Power MOSFET IXTA6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Tes...

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hannel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 300 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb. 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Val

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