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PolarHVTM Power MOSFET
IXTA 6N50P IXTP 6N50P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1
V A
Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220)
TO-220 TO-263
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 50µA
IGSS VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.
IXTA6N50P Datasheet
