Full PDF Text Transcription for IXTA70N075T2 (Reference)
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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA70N075T2 IXTP70N075T2 VDSS = ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25...
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ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IDM IAR EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Maximum Ratings 75 75 V V ± 20 V 70 A 180
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IXTA70N075T2
N-Channel MOSFET
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IXTA70N075T2 Datasheet
