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IXTA8N50P - PolarHV Power MOSFET

Key Features

  • l l l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 100µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 0.8 V V nA µA µA Ω International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5.

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www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 8 14 8 20 400 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.