Overview: www.DataSheet4U.com PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 8 14 8 20 400 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb.in.
