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IXTC110N055T - Power MOSFET

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 78 A 9.0 mΩ Symbol V DSS VDGR VGSM ID25 ILRMS I DM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD VISOL FC Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 55 V 55 V ± 20 V TC = 25°C Package Current Limit, RMS T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω T C = 25°C 78 A 75 A 600 A 25 A 500 mJ 3 V/ns 100 W -55 ... +175 °C 175 °C -55 ... +175 °C 1.6 mm (0.062 in.