IXTC160N10T Description
2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min.
IXTC160N10T Key Features
- easy to drive and to protect 175 °C Operating Temperature
IXTC160N10T is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTC160N10T | N-Channel MOSFET |
2 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min.