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IXTC160N10T - Power MOSFET

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchMVTM IXTC160N10T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 100 83 7.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 100 V 100 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 83 A 75 A 430 A 25 A 500 mJ 3 V/ns 140 W -55 ... +175 °C 175 °C -55 ... +175 °C 1.6 mm (0.062 in.