IXTC160N10T
IXTC160N10T is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchMVTM
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
100 83 7.5
V A mΩ
Symbol
VDSS VDGR
VGSM
ID25 IL IDM
IAR EAS dv/dt
TJ TJM Tstg
TL TSOLD VISOL
FC Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
Maximum Ratings
± 20
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
500 mJ
V/ns
-55 ......
