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IXTC36P15P - Power MOSFET

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information PolarPTM Power MOSFET (Electrically Isolated Tab) IXTC36P15P IXTR36P15P VDSS = -150V ID25 = - 22A RDS(on) ≤ 120mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS, t = 1minute Mounting Force (ISOPLUS220) Mounting Force (ISOPLUS247) ISOPLUS220 ISOPLUS247 Maximum Ratings -150 -150 V V ± 20 ± 30 - 22 -100 - 36 1.5 V V A A A J 10 150 - 55 ... +175 175 - 55 ...