IXTC62N15P Description
Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 = RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM.
IXTC62N15P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Unclamped Inductive Switching (UIS) rated l Low package inductance
- easy to drive and to protect l Fast intrinsic diode