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IXTH10N100D2 Datasheet PDF

IXYS IXTH10N100D2

Depletion Mode MOSFET

Part No. IXTH10N100D2
Datasheet IXTH10N100D2 Download
Manufacturer
IXYS
Description Depletion Mode MOSFET
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IXTH10N100D2 datasheet page 1 preview

MAXIMUM RATINGS

1000 V 1000 V 20 V 30 V 695 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g 4 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 V VGS(off) VDS = 25V, ID = 1mA - 2.5 - 4.5 V IGSX VGS = 20V, VDS = 0V 100 nA IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C 10 A 250 A RDS(on) VGS = 0V, ID = 5A, Note 1 1.5  ID(on) VGS = 0V, VDS = 25V, Note 1 10 A TO-268 (IXTT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain

FEATURES

● Normally ON Mode
● International Standard Packages
● Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
● Easy to Mount
● Space Savings
● High Power Density

APPLICATIONS

● Audio Amplifiers
● Start-up Circuits
● Protection Circuits
● Ramp Generators
● Current Regulators
● Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100326A(4/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise S...
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