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IXTH10P50P Datasheet PDF

IXYS IXTH10P50P

Power MOSFET

Part No. IXTH10P50P
Datasheet IXTH10P50P Download
Manufacturer
IXYS
Description Power MOSFET
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IXTH10P50P datasheet page 1 preview

MAXIMUM RATINGS

- 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C - 10 A - 30 A - 10 A 1.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 10 300 -55 ... +150 150 -55 ... +150 V/ns W C C C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 C 260 C Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.5
● ID25, Note 1 Characteristic Values Min. Typ. Max. - 500 V - 2.0 - 4.5 V 100 nA - 10 A - 250 A 1 G D S TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain

FEATURES

● International Standard Packages
● Avalanche Rated
● Rugged PolarPTM Process
● Low Package Inductance
● Fast Intrinsic Diode Advantages
● Easy to Mount
●...
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