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IXTH12N150 - High Voltage Power MOSFET

Download the IXTH12N150 datasheet PDF. This datasheet also covers the IXTT12N150 variant, as both devices belong to the same high voltage power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Molding Epoxies Weet UL 94 V-0 Flammability Classification.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT12N150-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH12N100 MOSFET IXYS Corporation
IXTH12N65X2 N-Channel MOSFET INCHANGE
IXTH12N70X2 N-Channel MOSFET INCHANGE
IXTH12N90 N-Channel MOSFET INCHANGE
IXTH102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH12N100L Power MOSFET
IXTH12N120 Power MOSFET
IXTH12N140 Power MOSFET
IXTH12N65X2 Power MOSFET
IXTH12N70X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1500 V 1500 V 30 V 40 V 12 A 40 A 6 A 750 mJ 5 V/ns 890 W - 55 ... +150 C 150 C - 55 ... +150 C 300 C 260 C 1.13 / 10 Nm/lb.in. 4.0 g 6.