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IXTH12N65X2 - Power MOSFET

This page provides the datasheet information for the IXTH12N65X2, a member of the IXTA12N65X2 Power MOSFET family.

Product Overview

IXYS

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IXTH12N65X2 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXTH12N65X2

Datasheet Details

Part number	IXTH12N65X2
Manufacturer	IXYS
File Size	204.03 KB
Description	Power MOSFET
Datasheet	IXTH12N65X2 Datasheet
Additional preview pages of the IXTH12N65X2 datasheet.

IXTH12N65X2 Product details

Features

International Standard Packages.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 2.5 4.5 V 100 nA 5 A 50 A 300 m Advantages.
High Power Den.

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Published: Aug 16, 2016 |