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Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N15T IXTQ130N15T
V= DSS
ID25 =
RDS(on) ≤
150 130
12
V A mΩ
TO-247 (IXTH)
Symbol
VDSS V
DGR
V GSM
ID25 ILRMS IDM IAR EAS
dv/dt
PD TJ TJM Tstg TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1
MΩ
Transient
TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque
TO-3P TO-247
Maximum Ratings
150
V
150
V
± 30
V
130
A
75
A
330
A
5
A
1.2
J
3
V/ns
G D S
TO-3P (IXTQ)
G D S
(TAB) (TAB)
750
-55 ... +175 175
-55 ...
IXTH130N15T Datasheet
