Overview: Preliminary Technical Information TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS
ID25 =
RDS(on) ≤ 150 130
12 V A mΩ TO-247 (IXTH) Symbol
VDSS V
DGR
V GSM
ID25 ILRMS IDM IAR EAS
dv/dt
PD TJ TJM Tstg TL
Md
Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω
TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque
TO-3P TO-247 Maximum Ratings 150 V 150 V ± 30 V 130 A 75 A 330 A 5 A 1.2 J 3 V/ns G D S
TO-3P (IXTQ)
G D S (TAB) (TAB) 750
-55 ... +175 175
-55 ... +175 W G = Gate S = Source D = Drain TAB = Drain °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.
