IXTH130N15T
IXTH130N15T is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N15T IXTQ130N15T
V= DSS
ID25 =
RDS(on) ≤
150 130
V A mΩ
TO-247 (IXTH)
Symbol
VDSS V
V GSM
ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
=
25°C to
175°C;
R GS
=
MΩ
Transient
TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω
TC =...
